Study on the Reverse Bias Carrier Transport Mechanism in Au/TiO2/n-4H-SiC Structure

Alialy S., Yildiz D. E., Altindal Ş.

JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, vol.11, no.5, pp.626-630, 2016 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 11 Issue: 5
  • Publication Date: 2016
  • Doi Number: 10.1166/jno.2016.1942
  • Journal Name: JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.626-630
  • Keywords: Au/TiO2/n-4H-SiC SBDs, Temperature Dependent, Leakage Current-Voltage (I-R-V-R) Characteristics, Frenkel-Poole, Schottky Emission, SCHOTTKY-BARRIER DIODES, LEAKAGE CURRENT, INTERFACIAL LAYER, ORGANIC-DEVICES, PHASE EPITAXY, CONTACTS, TEMPERATURE, SURFACE, BENZOTRIAZOLE, EXTRACTION
  • Gazi University Affiliated: Yes

Abstract

In this paper we examine the reverse bias carrier transport mechanism in Au/TiO2/n-4H-SiC structure. The current-voltage-temperature (I-R-V-T) plots have been investigated in the temperature range of 200-380 K. Experimental results indicated that I-R-V-R characteristics were found to be in agreement with the predicted characteristics, which are based on the Frenkel-Poole (FP) emission rather than Schottky emission (SE). According to FP theory, the main process in leakage current-transport is the emission of the electrons from a trapped states near the metal-semiconductor interface into a continuum of states which associated with each conductive dislocation. The obtained A(T) value versus q/kT plots were drawn and the barrier height (phi(t)) which is necessary for electron emission from the trap was found at about 42 meV for low and 111 meV high temperatures, respectively.