Comparison of electrical properties of MS and MPS type diode in respect of (In2O3-PVP) interlayer


TATAROĞLU A. , ALTINDAL Ş. , Azizian-Kalandaragh Y.

Physica B: Condensed Matter, cilt.576, 2020 (SCI Expanded İndekslerine Giren Dergi) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 576
  • Basım Tarihi: 2020
  • Doi Numarası: 10.1016/j.physb.2019.411733
  • Dergi Adı: Physica B: Condensed Matter

Özet

© 2019 Elsevier B.V.In this study, the electronic properties of Au/n-Si (MS) and Au/(In2O3-PVP)/n-Si (MPS) diode have been investigated to see the effects of an organic (In2O3-PVP) interlayer by utilizing voltage-dependent current (I) and capacitance (C) measurements. The organic indium oxide (In2O3) nanostructures were characterized by XRD, SEM and UV–Vis spectrophotometer techniques. The rectifying ratio (RR) of the fabricated MS and MPS diode at ± 3 V was found as 1.89 × 103 and 6.18 × 103, respectively. The electronic parameters for instance the ideality factor (n) and barrier height (ΦBo) of MS and MPS diode were found as 1.94 and 2.20, and 0.73 eV and 0.76 eV, respectively. Additionally, series resistance (Rs), n, and ΦBo values were calculated by using Cheung's functions as second way to see the used calculation method and voltage effects on them. Therefore, the Rs and ΦBo values were determined from both the Norde method and C–V characteristics.