Effect of Annealing on the Surface Morphology and Current-Voltage Characterization of a CZO Structure Prepared by RF Magnetron Sputtering

KINACI B., ÇELİK E. G., ÇOKDUYGULULAR E., ÇETİNKAYA Ç., YALÇIN Y., EFKERE H. İ., ...Daha Fazla

SEMICONDUCTORS, cilt.55, sa.1, ss.28-36, 2021 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 55 Sayı: 1
  • Basım Tarihi: 2021
  • Doi Numarası: 10.1134/s1063782621010115
  • Dergi Adı: SEMICONDUCTORS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Chemical Abstracts Core, INSPEC
  • Sayfa Sayıları: ss.28-36
  • Anahtar Kelimeler: CZO, structural properties, surface morphology, RF magnetron sputtering, I(V) characteristic
  • Gazi Üniversitesi Adresli: Evet

Özet

In this study, we investigated the Cu-doped ZnO (CZO) structure. This structure was deposited on the Si and glass substrates using the RF magnetron sputtering technique. Morphological and structural features of CZO thin films (CZOs), as-deposited and annealed at temperatures of 200, 400, and 600 degrees C, were characterized by X-Ray diffraction (XRD), scanning electron microscopy (SEM), as well as atomic force microscopy (AFM). CZO film annealed at temperature of 600 degrees C has a sharp peak, good homogeneity, and low surface roughness compared to others. Electrical properties of the MOS structures, which are of CZO interlayer, deposited on n-Si substrate, were characterized by I(V) measurement at room temperature. The fundamental electrical parameters were calculated by analyzing the forward-bias I(V) curves at room temperature. The series resistance R-s values of the device were also determined using thermionic emission theory and Cheung and Cheung methods. According to experimental results, Au|CZO|n-Si MOS structure annealed at 600 degrees C has low R-s values compared to other investigated MOS structures in the present study. As a result, it was found that CZO structure annealed at 600 degrees C is suitable for innovative and state-of-the-art electronic and optoelectronic device applications.