The effect of Co-60 (gamma-ray) irradiation Au/SnO2/n-Si on the electrical characteristics of (MIS) structures

Goekcen M., TATAROĞLU A., Altindal Ş., Buelbuel M. M.

RADIATION PHYSICS AND CHEMISTRY, cilt.77, sa.1, ss.74-78, 2008 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 77 Sayı: 1
  • Basım Tarihi: 2008
  • Doi Numarası: 10.1016/j.radphyschem.2007.02.006
  • Dergi Adı: RADIATION PHYSICS AND CHEMISTRY
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.74-78
  • Anahtar Kelimeler: gamma-rays, MIS structure, radiation effects, series resistance, MOS CAPACITORS, INTERFACE STATES, CONDUCTANCE TECHNIQUE, IONIZING-RADIATION, DEPENDENCE, FREQUENCY, GENERATION, DENSITY, DEVICES, OXIDES
  • Gazi Üniversitesi Adresli: Evet

Özet

The effect of (CO)-C-60 (gamma-ray) irradiation on the electrical properties of Au/SnO2/n-Si (MIS) structures has been investigated using the capacitance-voltage (C-V) and conductance-voltage (G/omega-V) measurements in the frequency range 1kHz to 1MHz at room temperature. The MIS structures were exposed to gamma-rays at a dose rate of 2.12 kGy/h in water and the range of total dose was 0-500 kGy. It was found that the C-V and G/omega-V curves were strongly influenced with both frequency and the presence of the dominant radiation-induced defects, and the series resistance was increased with increasing dose. Also, the radiation-induced threshold voltage shift (Delta V-T) strongly depended on radiation dose and frequency, and the density of interface states N-ss by Hill-Coleman method decreases with increasing radiation dose. (C) 2007 Elsevier Ltd. All rights reserved.