Akademik Veri Yönetim Sistemi
Journal of Materials Science: Materials in Electronics, cilt.37, sa.4, 2026 (SCI-Expanded, Scopus)
This study provides a detailed analysis of the observed negative dielectric, anomalous peak, and inductive behaviors in the Au/n-Si (MS) devices with and without pure, 0.03Ni, and 0.05Ni–PVP interlayers at forward bias voltages in the real/imaginary parts (ε′ and ε″) of complex dielectric versus voltage and current for 0.5 MHz. The other key parameters, like complex impedance (Z′, Z″) and electric modulus (M′, M″), AC conductivity (σac), and phase angle (θ), were also calculated from the capacitance/conductance values between ± 3.5 V. Experimental results show that the ε'–V plot gives a clear peak at around 0.5 V for all samples and then goes negative after ~ 2 V, while ε″ increases exponentially in these regions. To explain these interesting situations, both ε′ and ε″ values were plotted together against voltage and current. In both graphs, the C value rapidly goes negative, while the G rapidly increases with increasing voltage and current. Nyquist plots (Z″–Z′ and M″–M′) show as semicircular curves and both their radius and center varied systematically with the doping ratio of Ni atoms. Such behavior of ε′ and ε" at accumulation regime is a great importance physical feature and shows that an increase of voltage produces an important decline in the electrons between electrodes as well as to be available surface or interface (Nss) at junction, their lifetimes (τ), series resistance (Rs), and minority carrier injections. The maximum value of e′ for MS, MPS1, MPS2, and MPS3 were calculated as 0.38, 10.6, 13.0, and 13.8, respectively. It is obvious that the value of e′ for MPS3 is 36.1 times higher than the MS.