Akademik Veri Yönetim Sistemi
5th International Conference on Light and Light-Based Technologies Sponsored by Optica, Ankara, Türkiye, 15 - 17 Mayıs 2025, ss.60-61, (Özet Bildiri)
The growing demand for sustainable energy solutions has increased interest in environmentally friendly and stable perovskite solar cells (PSCs). Perovskite solar cells (PSCs) are emerging photovoltaic technology that has attracted significant attention due to their high power conversion efficiencies (PCEs) and low-cost fabrication methods. In this study, we propose a novel silicon-based perovskite absorber material, CsSiF₃, and investigate its integration within the solar cell architecture FTO/ Cd0.5Zn0.5S / CsSiF3/ MoO3/ Au. The impact of the absorber, electron transport layers (ETL), and hole transport layers (HTL) on device performance was systematically analyzed using SCAPS-1D simulation software. The ETL and HTL layers significantly influenced charge transport and recombination dynamics [1]. To further understand the role of the CsSiF₃ absorber, first-principles calculations were performed within the framework of density functional theory (DFT). The band structure revealed a direct bandgap of approximately 1.244 eV, which is optimal for solar energy absorption. The total density of states (TDOS) and charge density difference plots indicated that silicon atoms are critical in charge distribution and photon interaction processes. The optical absorption spectrum derived from DFT was also used to construct an ABS file for SCAPS simulations. This integration allowed a realistic representation of light-matter interaction in the absorber layer, improving the accuracy of simulated efficiency outcomes [2]. Following extensive parameter optimization, the simulated device achieved a PCE of 23.8%, with an open-circuit voltage (Voc) of 0.83 V, a short-circuit current density (Jsc) of 3.15 mA/cm², and a fill factor (FF) of 86.3%. These findings position CsSiF₃ as a promising candidate for next-generation, lead-free perovskite solar cells.