Structural and optical properties of an InxGa1-xN/GaN nanostructure


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Korcak S., Oeztuerk M. K. , Coerekci S., Akaoglu B., Yu H., Cakmak M. , ...Daha Fazla

Surface Science, cilt.601, ss.3892-3897, 2007 (SCI Expanded İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 601
  • Basım Tarihi: 2007
  • Doi Numarası: 10.1016/j.susc.2007.04.088
  • Dergi Adı: Surface Science
  • Sayfa Sayıları: ss.3892-3897

Özet

The structural and optical properties of an InxGa1-xN/GaN multi-quantum well (MQW) were investigated by using X-ray diffraction (XRD), atomic force microscopy (AFM), spectroscopic ellipsometry (SE) and photoluminescence (PL). The MQW structure was grown on c-plane (0 0 0 1)-faced sapphire substrates in a low pressure metalorganic chemical vapor deposition (MOCVD) reactor. The room temperature photoluminescence spectrum exhibited a blue emission at 2.84 eV and a much weaker and broader yellow emission band with a maximum at about 2.30 eV. In addition, the optical gaps and the In concentration of the structure were estimated by direct interpretation of the pseudo-dielectric function spectrum. It was found that the crystal quality of the InGaN epilayer is strongly related with the Si doped GaN layer grown at a high temperature of 1090 °C. The experimental results show that the growth MQW on the high-temperature (HT) GaN buffer layer on the GaN nucleation layer (NL) can be designated as a method that provides a high performance InGaN blue light-emitting diode (LED) structure. © 2007 Elsevier B.V. All rights reserved.