Variable-range hopping conductivity in InGaN


Yildiz A., Kasap M.

6th International Conference of the Balkan-Physical-Union, İstanbul, Türkiye, 22 - 26 Ağustos 2006, cilt.899, ss.293-294 identifier identifier

  • Cilt numarası: 899
  • Doi Numarası: 10.1063/1.2733152
  • Basıldığı Şehir: İstanbul
  • Basıldığı Ülke: Türkiye
  • Sayfa Sayıları: ss.293-294

Özet

Electrical resistivity of InGaN layers grown by metal organic vapor phase epitaxy has been studied at narrow temperature interval. Resistivity and Hall effect measurements were carried out as a function of temperature in the samples. We obtained that there was Mott variable range hopping mechanism in investigated samples.