Variable-range hopping conductivity in InGaN

Yildiz A., Kasap M.

6th International Conference of the Balkan-Physical-Union, İstanbul, Turkey, 22 - 26 August 2006, vol.899, pp.293-294 identifier identifier

  • Publication Type: Conference Paper / Full Text
  • Volume: 899
  • Doi Number: 10.1063/1.2733152
  • City: İstanbul
  • Country: Turkey
  • Page Numbers: pp.293-294
  • Gazi University Affiliated: Yes


Electrical resistivity of InGaN layers grown by metal organic vapor phase epitaxy has been studied at narrow temperature interval. Resistivity and Hall effect measurements were carried out as a function of temperature in the samples. We obtained that there was Mott variable range hopping mechanism in investigated samples.