Research Information System
6th International Conference of the Balkan-Physical-Union, İstanbul, Turkey, 22 - 26 August 2006, vol.899, pp.293-294
Electrical resistivity of InGaN layers grown by metal organic vapor phase epitaxy has been studied at narrow temperature interval. Resistivity and Hall effect measurements were carried out as a function of temperature in the samples. We obtained that there was Mott variable range hopping mechanism in investigated samples.