Thermal dependence on electrical characteristics of Au/(PVC:Sm2O3)/n-Si structure

Creative Commons License

BADALI Y., Altan H., ALTINDAL Ş.

Journal of Materials Science: Materials in Electronics, cilt.35, sa.3, 2024 (SCI-Expanded) identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 35 Sayı: 3
  • Basım Tarihi: 2024
  • Doi Numarası: 10.1007/s10854-023-11898-2
  • Dergi Adı: Journal of Materials Science: Materials in Electronics
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Aerospace Database, Applied Science & Technology Source, Chemical Abstracts Core, Communication Abstracts, Compendex, Computer & Applied Sciences, INSPEC, MEDLINE, Metadex, Civil Engineering Abstracts
  • Gazi Üniversitesi Adresli: Evet

Özet

In this study, we investigated the current–voltage (I–V) characteristics of Au/n-Si structure with an interfacial layer of Samarium Oxide (Sm2O3) nanoparticles (NPs) in polyvinyl chloride (PVC) matrix within a temperature range of 80–320 K. Applying the thermionic emission (TE) theory, essential electrical parameters such as reverse saturation current (I0), ideality factor (n), zero bias barrier height (Φ B0), series resistance (Rs), and rectification rate (RR) were carefully derived from the I–V data. The mean values of BH and Richardson constant obtained from the modified Richardson plot were determined to be 0.730 eV and 111.4 A/(cmK)2, respectively. Remarkably, this A * value closely matches its theoretical counterpart for n-type Si. Thus, our findings successfully highlight the effectiveness of the thermionic emission (TE) mechanism with the Gaussian distribution of BHs in explaining the I-V-T characteristics of the fabricated Schottky structure, shedding light on the intricate interplay between temperature and diode behavior. These insights offer valuable guidance for designing and optimizing thermal-sensitive devices based on this innovative structure.