Conductivity, Hall and magnetoresistance effect measurements on SIGaAs and InP

ACAR S., Kasap M.

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, vol.201, no.7, pp.1551-1557, 2004 (Peer-Reviewed Journal) identifier identifier

  • Publication Type: Article / Article
  • Volume: 201 Issue: 7
  • Publication Date: 2004
  • Doi Number: 10.1002/pssa.200306812
  • Journal Indexes: Science Citation Index Expanded
  • Page Numbers: pp.1551-1557


The conductivity, Hall effect and magnetoresistance quantities in semi-insulating undoped GaAs and Fe-doped GaAs and InP grown by the LEC technique have been measured in the temperature range 300-420 K. It is shown that mixed conductivity is present in all samples. The experimental data were analyzed using a two-band model including electron and hole transport. A good fit has been obtained self-consistently to both conductivity and mobility. The single-band parameters have been extracted from the measured data in the studied temperature range. From ln (\R-H.0\ T-3/2) and sigma vs T-1 plots, activation energies of 0.77 and 0.65 eV have also been observed for GaAs and InP, respectively. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.