The investigation of Pt doping effect on the structural and electrical properties of SnO2 thin films was aimed in this study. For this purpose, the polycrystalline pure and Pt-doped SnO2 thin films were deposited onto n-type silicon substrate and the Pt sputter power was varied as 0 (un-doped), 2, 5 and 7 W by using radio frequency confocal sputtering system. The structural properties of the samples were analysed by X-ray diffraction measurements. The structural results show that the 5 W Pt-doped SnO2 sample has better crystallinity than the other samples. The results of the electrical measurements as current-voltage, capacitance-voltage and conductance-voltage were also obtained and discussed in detail for fabricated diodes. The analysis of electrical characteristics shows that the use of different Pt doping has significant effect on electrical properties of such devices. The study also provides an improved supplemental understanding to the related technologies which use Pt-doped SnO2 materials.