Effect on the Electrical Characterizations of Temperature and Frequency Depending on Series Resistance and Interface States in MS Structure

KINACI B.

JOURNAL OF POLYTECHNIC-POLITEKNIK DERGISI, cilt.20, sa.2, ss.313-318, 2017 (ESCI) identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 20 Sayı: 2
  • Basım Tarihi: 2017
  • Doi Numarası: 10.2339/2017.20.2.313-318
  • Dergi Adı: JOURNAL OF POLYTECHNIC-POLITEKNIK DERGISI
  • Derginin Tarandığı İndeksler: Emerging Sources Citation Index (ESCI), TR DİZİN (ULAKBİM)
  • Sayfa Sayıları: ss.313-318
  • Anahtar Kelimeler: MS Structure, Ni/Au Metal Contact, Electrical Characterizations, SCHOTTKY-BARRIER DIODES, V-T CHARACTERISTICS, CURRENT-VOLTAGE, CAPACITANCE-VOLTAGE, I-V, C-V, SI, CONTACTS, DEPENDENCE, NI/AU
  • Gazi Üniversitesi Adresli: Hayır

Özet

In order to explain the experimental effect of series resistance and interface states of device on current-voltage, capacitance-voltage and conductance-voltage characteritics of Ni/Au/n-Si structure have beeen investigated. Current-voltage characteritics of structure have beeen measuremed in the temperature range of 100K-380K by steps of 40K. In addition, capacitance-voltage and conductance-voltage characteristics of structure have beeen measuremed in the frequency range of 100kHz-1MHz at room temperature. The obtained results show that the Ni/Au/n-Si structure is a good candidate for the electronic device applications.