Effect on the Electrical Characterizations of Temperature and Frequency Depending on Series Resistance and Interface States in MS Structure


KINACI B.

JOURNAL OF POLYTECHNIC-POLITEKNIK DERGISI, vol.20, no.2, pp.313-318, 2017 (ESCI) identifier

  • Publication Type: Article / Article
  • Volume: 20 Issue: 2
  • Publication Date: 2017
  • Doi Number: 10.2339/2017.20.2.313-318
  • Journal Name: JOURNAL OF POLYTECHNIC-POLITEKNIK DERGISI
  • Journal Indexes: Emerging Sources Citation Index (ESCI), TR DİZİN (ULAKBİM)
  • Page Numbers: pp.313-318
  • Keywords: MS Structure, Ni/Au Metal Contact, Electrical Characterizations, SCHOTTKY-BARRIER DIODES, V-T CHARACTERISTICS, CURRENT-VOLTAGE, CAPACITANCE-VOLTAGE, I-V, C-V, SI, CONTACTS, DEPENDENCE, NI/AU
  • Gazi University Affiliated: No

Abstract

In order to explain the experimental effect of series resistance and interface states of device on current-voltage, capacitance-voltage and conductance-voltage characteritics of Ni/Au/n-Si structure have beeen investigated. Current-voltage characteritics of structure have beeen measuremed in the temperature range of 100K-380K by steps of 40K. In addition, capacitance-voltage and conductance-voltage characteristics of structure have beeen measuremed in the frequency range of 100kHz-1MHz at room temperature. The obtained results show that the Ni/Au/n-Si structure is a good candidate for the electronic device applications.