Effect on the Electrical Characterizations of Temperature and Frequency Depending on Series Resistance and Interface States in MS Structure
JOURNAL OF POLYTECHNIC-POLITEKNIK DERGISI, cilt.20, sa.2, ss.313-318, 2017 (ESCI, TRDizin)
- Yayın Türü: Makale / Tam Makale
- Cilt numarası: 20 Sayı: 2
- Basım Tarihi: 2017
- Doi Numarası: 10.2339/2017.20.2.313-318
- Dergi Adı: JOURNAL OF POLYTECHNIC-POLITEKNIK DERGISI
- Derginin Tarandığı İndeksler: Emerging Sources Citation Index (ESCI), TR DİZİN (ULAKBİM)
- Sayfa Sayıları: ss.313-318
- Anahtar Kelimeler: MS Structure, Ni/Au Metal Contact, Electrical Characterizations, SCHOTTKY-BARRIER DIODES, V-T CHARACTERISTICS, CURRENT-VOLTAGE, CAPACITANCE-VOLTAGE, I-V, C-V, SI, CONTACTS, DEPENDENCE, NI/AU
- Gazi Üniversitesi Adresli: Hayır
Özet
In order to explain the experimental effect of series resistance and interface states of device on current-voltage, capacitance-voltage and conductance-voltage characteritics of Ni/Au/n-Si structure have beeen investigated. Current-voltage characteritics of structure have beeen measuremed in the temperature range of 100K-380K by steps of 40K. In addition, capacitance-voltage and conductance-voltage characteristics of structure have beeen measuremed in the frequency range of 100kHz-1MHz at room temperature. The obtained results show that the Ni/Au/n-Si structure is a good candidate for the electronic device applications.