The effect of InxGa1-xN back-barriers on the dislocation densities in Al0.31Ga0.69N/AlN/GaN/InxGa1-xN/GaN heterostructures (0.05 <= x <= 0.14)

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Sarikavak-Lisesivdin B., Lisesivdin S. B., Ozbay E.

CURRENT APPLIED PHYSICS, vol.13, no.1, pp.224-227, 2013 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 13 Issue: 1
  • Publication Date: 2013
  • Doi Number: 10.1016/j.cap.2012.07.012
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.224-227
  • Keywords: InGaN back-barrier, MOCVD, XRD, Defect analyses, ELECTRON-MOBILITY, TRANSISTORS
  • Gazi University Affiliated: Yes


Al0.31Ga0.69N/AlN/GaN/InxGa1-xN/GaN heterostructures grown with the metal-organic chemical vapor deposition (MOCVD) technique with different InxGa1-xN back-barriers with In mole fractions of 0.05 <= x <= 0.14 were investigated by using XRD measurements. Screw, edge, and total dislocations, In mole fraction of back-barriers, Al mole fraction, and the thicknesses of front-barriers and lattice parameters were calculated. Mixed state dislocations with both edge and screw type dislocations were observed. The effects of the In mole fraction difference in the back-barrier and the effect of the thickness of front-barrier on crystal quality are discussed. With the increasing In mole fraction, an increasing dislocation trend is observed that may be due to the growth temperature difference between ultrathin InxGa1-xN back-barrier and the surrounding layers. (C) 2012 Elsevier B.V. All rights reserved.