Akademik Veri Yönetim Sistemi
JOURNAL OF POLYTECHNIC-POLITEKNIK DERGISI, sa.2, ss.643-646, 2022 (ESCI)
In this study structural and morphological properties of InGaN/GaN/Al2O3 structure, grown by Metal Organic Chemical Vapor Deposition (MOCVD) technique, is investigated. Crystal size of GaN in the structure is determined by using X-Ray Diffraction (XRD) techique. By the help of Raman spectra calibration coefficient is gained. This calibration coefficient and Termoelectric figure (ZT) of GaN is used to estimate number of stacks of GaN in the structure. Number of stacks (N) is a structural property and by using it an optical property, absorption coefficient, is determined. Using Atomic Force Microscopy (AFM) and Scanning Electron Microscopy (SEM) images total thickness of the sample is determined accurately and they are compared with each other. The sample used in this study is only for an example. The methods used in this study can be applied to different structures if right coefficients can be found. The importance of this study is that it plays a key role for determining structural, optical and morphological features of different samples.