Akademik Veri Yönetim Sistemi
Journal of Electronic Materials, cilt.52, sa.4, ss.2432-2440, 2023 (SCI-Expanded)
© 2023, The Minerals, Metals & Materials Society.In the present study, voltage-dependent variation of the interface traps (Dit) and series resistance (Rs) and their effects on the electrical features of a Schottky structure with CdZnO interface were investigated via frequency-dependent impedance measurements (Z–V). While two different methods—the high-low frequency capacitance (CLF–CHF) and Hill–Coleman methods—were utilized in determining the voltage and frequency dependence of Dit, the Nicollian–Brews method was preferred in the calculation of the Rs. Experimental results indicate a decrease of both Dit and Rs values exponentially when frequency increases, and the peak behavior of the Dit–V plot occurred at about 1.5 V due to the special density distribution of Dit at the interlayer/Si interface. Corrections were carried out on the C/G–V measurements performed at 1 MHz, to examine the effects of Rs on the measurements. After these corrections, while the value of capacitance increases more at the intermediate and high voltages corresponding to the depletion and accumulation zones, the G–V plot gives two prominent peaks in these zones, respectively. This correction process reveals that for higher frequencies and intermediate and high voltages, the effect of Rs is dominant on the C/G–V graphs. Additionally, to designate some important electrical features of the Schottky structure with CdZnO interface, for instance, the acceptor atom concentration (NA), Fermi energy level (EF), barrier height (BH, Φ B), and the width of the depletion layer (WD), C−2–V plots were drawn for the reverse bias zone. Both the Φ B and WD values show an almost linear variation with frequency.