6TH INTERNATIONAL CONGRESS ON ENGINEERING AND LIFE SCIENCE , Girne, Kıbrıs (Kktc), 2 - 04 Eylül 2025, ss.22, (Özet Bildiri)
In this study, diodes with heterojunction structures were fabricated using thin films based on 3-benzoyl7-hydroxy coumarin (BHYC), and the electrical characterization of these structures was performed. An n-type coumarin thin film was successfully deposited onto a p-type silicon (p-Si) substrate to form an Al/n-Coumarin/p-Si heterojunction structure. The surface morphology of the fabricated samples was analyzed using scanning electron microscopy (SEM), and structural features such as surface uniformity were evaluated. As part of the electrical characterization, current–voltage (I–V) measurements were carried out to determine key diode parameters, including the ideality factor (n), barrier height (ϕ_b), and saturation current (I₀). The obtained results indicate that BHYC-based coumarin derivatives exhibit favorable electronic properties and hold promise for use in various semiconductor applications, particularly in optoelectronic devices.