Dielectric Properties of Graded and Non-Graded InGaN/GaN MQWs

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Bilgili A. K., Öztürk M., Özçelik S., Tataroğlu A.

Karadeniz Fen Bilimleri Dergisi, cilt.11, sa.1, ss.214-221, 2021 (Hakemli Dergi)

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 11 Sayı: 1
  • Basım Tarihi: 2021
  • Doi Numarası: 10.31466/kfbd.841375
  • Dergi Adı: Karadeniz Fen Bilimleri Dergisi
  • Derginin Tarandığı İndeksler: TR DİZİN (ULAKBİM)
  • Sayfa Sayıları: ss.214-221
  • Gazi Üniversitesi Adresli: Evet

Özet

In this study, dielectric properties of graded and non-graded InGaN/GaN multi quantum wells (MQWs), grown on sapphire(Al2O3) wafer by Metal Organic Chemical Vapor Deposition (MOCVD) technique, are investigated. In order to notice graded layer effect on characteristics of MQWs some of GaN layers are grown by doping In atoms. Dielectric function of films are determined by Swanepoel envelope method. Real and imaginer dielectric coefficient of the films are calculated by using refraction index and extinction coefficient. Differences in refraction index values are discussed for graded and non-graded samples. During determination of dielectric function variations of complex and imaginer dielectric coefficients with photon energy are shown for both samples