A theoretical study of sulphur adsorption on InP(110)

ÇAKMAK M., Srivastava G.

SURFACE SCIENCE, cilt.377, ss.592-596, 1997 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 377
  • Basım Tarihi: 1997
  • Doi Numarası: 10.1016/s0039-6028(96)01454-9
  • Dergi Adı: SURFACE SCIENCE
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.592-596
  • Gazi Üniversitesi Adresli: Evet

Özet

We have performed ab initio pseudopotential calculations to investigate the bonding and atomic geometry of the S/InP(110) system. For a full non-diffused monolayer coverage we find that S atoms form the epitaxially continued layer structure. Among various geometrical possibilities for non-diffused half-monolayer coverage, we find that the S atoms occupy the interchain bridging site. Our results are compared with recent X-ray standing wave measurements.