Analysis of ternary InGaN layers grown by atmospheric pressure vertical MOVPE

Yildiz A., Ozturk M. K., Kasap M.

6th International Conference of the Balkan-Physical-Union, İstanbul, Türkiye, 22 - 26 Ağustos 2006, cilt.899, ss.295-296 identifier identifier

  • Yayın Türü: Bildiri / Tam Metin Bildiri
  • Cilt numarası: 899
  • Doi Numarası: 10.1063/1.2733413
  • Basıldığı Şehir: İstanbul
  • Basıldığı Ülke: Türkiye
  • Sayfa Sayıları: ss.295-296
  • Gazi Üniversitesi Adresli: Evet

Özet

We present a study on the n-type ternary InGaN layers grown by atmospheric pressure vertical metal organic chemical vapor deposition on GaN template/(0001) sapphire substrate. An investigation in the different growth conditions on n-type of the InxGa1-xN alloys was made for three series samples. Structural, electrical and optical properties were characterized by High X-Ray Diffraction, Hall effect and Photoluminescence respectively.