Electrical conduction properties of Si delta-doped GaAs grown by MBE

Creative Commons License

Yildiz A., LİŞESİVDİN S. B., Altuntas H., Kasap M., Ozcelik S.

PHYSICA B-CONDENSED MATTER, cilt.404, sa.21, ss.4202-4206, 2009 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 404 Sayı: 21
  • Basım Tarihi: 2009
  • Doi Numarası: 10.1016/j.physb.2009.07.190
  • Dergi Adı: PHYSICA B-CONDENSED MATTER
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.4202-4206
  • Gazi Üniversitesi Adresli: Evet

Özet

The temperature dependent Hall effect and resistivity measurements of Si delta-doped GaAs are performed in a temperature range of 25-300 K. The temperature dependence of carrier concentration shows a characteristic minimum at about 200 K, which indicates a transition from the conduction band conduction to the impurity band conduction. The temperature dependence of the conductivity results are in agreement with terms due to conduction band conduction and localized state hopping conduction in the impurity band. It is found that the transport properties of Si delta-doped GaAs are mainly governed by the dislocation scattering mechanism at high temperatures. On the other hand, the conductivity follows the Mott variable range hopping conduction (VRH) at low temperatures in the studied structures. (C) 2009 Elsevier B.V. All rights reserved.