Frequency dependent capacitance and conductance-voltage characteristics of Al/Si3N4/p-Si(100) MIS diodes

Bulbul M. M., Zeyrek S.

MICROELECTRONIC ENGINEERING, cilt.83, ss.2522-2526, 2006 (SCI-Expanded, Scopus) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 83
  • Basım Tarihi: 2006
  • Doi Numarası: 10.1016/j.mee.2006.06.002
  • Dergi Adı: MICROELECTRONIC ENGINEERING
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.2522-2526
  • Anahtar Kelimeler: conductance method, MIS structure, frequency dependence, series resistance, nitride passivation, CURRENT TRANSPORT MECHANISM, SERIES RESISTANCE, INTERFACE STATES, EXCESS CAPACITANCE, SILICON, DENSITY
  • Gazi Üniversitesi Adresli: Hayır

Özet

The frequency dependent capacitance-voltage (C-V-J) and conductance-voltage (G/w-V-J) characteristics of the metal-insulator-semiconductor (Al/Si3N4/p-Si) Schottky barrier diodes (SBDs) were investigated in the frequency range of 30 kHz-2 MHz. For each frequency, the C-V plots show a peak and the change in frequency has effects on both the intensity and position of the peaks. The C-2-V plot gives a straight line in wide voltage region, indicating that interface states and inversion layer charge cannot follow the ac signal in the depletion region, especially in the strong inversion and accumulation region. For each frequency, the plot of series resistance gives a peak, decreasing with increasing frequencies. Also, it has been shown that the interface states density exponentially decreases with increasing frequency. The C-V-f and G/w-V-f characteristics confirm that the N-ss and R-s of the diode are important parameters that strongly influence the electric parameters in MIS structure. (c) 2006 Elsevier B.V. All rights reserved.