Investigation of temperature-dependent electrical parameters in a Schottky barrier diode with multi-walled carbon nanotube (MWCNT) interface

Ezgin H., Demir E., ACAR S., ÖZER M.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, vol.147, 2022 (Peer-Reviewed Journal) identifier identifier

  • Publication Type: Article / Article
  • Volume: 147
  • Publication Date: 2022
  • Doi Number: 10.1016/j.mssp.2022.106672
  • Journal Indexes: Science Citation Index Expanded, Scopus, Academic Search Premier, PASCAL, Applied Science & Technology Source, Chemical Abstracts Core, Chimica, Communication Abstracts, Compendex, Computer & Applied Sciences, INSPEC, Metadex
  • Keywords: Schottky barrier diode, Electrical parameters, MWCNT, n-6H-SiC, Interface state density, VOLTAGE CHARACTERISTICS, FIELD-EMISSION, TRANSPORT, CONTACTS, HEIGHTS


We research the electrical parameters of the MWCNT/n-6H-SiC Schottky barrier diode (SBD) as a function of temperature. Voltage-dependent current and the capacitance measurements of the diode have been made between the temperatures of 300-480 K. The surface of the diode coated with CNT by drop drying method is examined by Scanning Electron Microscopy (SEM) and Raman Spectroscopy. It has been observed that MWCNTs coat on the semiconductor randomly and as entangled tubes, and the intensity in the D line is higher than in the G line. The ideality factor and barrier heights obtained from Thermionic Emission (TE) theory are in the range of 1.64-1.07 and 0.76-1.10 eV, respectively. The ideality factor and barrier heights of the produced diode are strongly related to temperature. By using Cheung-Cheung and Norde methods, series resistance, ideality factor, and barrier height parameters are calculated depending on temperature. It is effective in changing the series resistance of MWCNTs used as interface material. Capacitance-voltage (C-V) measurements of the MWCNT/n6H-SiC Schottky barrier diode are made at different frequencies at 300 K and a frequency of 1 MHz depending on different temperature. The increase of the produced diode capacitance at low frequencies is associated with the interface states.