Characteristic features of an ionization system with semiconducting cathode
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, cilt.2, sa.3, ss.267-273, 1998 (SCI-Expanded, Scopus)
- Yayın Türü: Makale / Tam Makale
- Cilt numarası: 2 Sayı: 3
- Basım Tarihi: 1998
- Doi Numarası: 10.1051/epjap:1998192
- Dergi Adı: EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS
- Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
- Sayfa Sayıları: ss.267-273
- Gazi Üniversitesi Adresli: Evet
Özet
The characteristic features of a de discharge genera.ted between parallel plate electrodes and especially the discharge stabilization by the GaAs semiconducting cathode in such a system are studied. The cathode was irradiated on the back-side with IR light in a particular wavelength range that was used to control the photoconductivity of the material. The semiconductor material was found to stabilize the discharge. The current-voltage and radiation-voltage characteristics of the gas discharge cell with a semiconducting cathode were obtained experimentally. An investigation of the effect of the voltage amplitude on the dynamics of transient processes in the plane semiconductor-discharge gap structure was made for explanation of the light intensity and current decay. Expressions are obtained for the photoelectric gain.