Characteristic features of an ionization system with semiconducting cathode

Salamov B., Altindal Ş., Ozer M., Colakoglu K., BULUR E.

EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, cilt.2, sa.3, ss.267-273, 1998 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 2 Sayı: 3
  • Basım Tarihi: 1998
  • Doi Numarası: 10.1051/epjap:1998192
  • Dergi Adı: EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.267-273
  • Gazi Üniversitesi Adresli: Evet

Özet

The characteristic features of a de discharge genera.ted between parallel plate electrodes and especially the discharge stabilization by the GaAs semiconducting cathode in such a system are studied. The cathode was irradiated on the back-side with IR light in a particular wavelength range that was used to control the photoconductivity of the material. The semiconductor material was found to stabilize the discharge. The current-voltage and radiation-voltage characteristics of the gas discharge cell with a semiconducting cathode were obtained experimentally. An investigation of the effect of the voltage amplitude on the dynamics of transient processes in the plane semiconductor-discharge gap structure was made for explanation of the light intensity and current decay. Expressions are obtained for the photoelectric gain.