Compositional effects on the interband transition in GaAs1-xPx ternary alloys


Cetin S. Ş. , Mammadov T. S. , Ozcelik S.

OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, vol.3, no.9, pp.910-916, 2009 (Journal Indexed in SCI) identifier

  • Publication Type: Article / Article
  • Volume: 3 Issue: 9
  • Publication Date: 2009
  • Title of Journal : OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS
  • Page Numbers: pp.910-916

Abstract

GaAs1-xPx/GaAs alloys were grown on SI-GaAs (100) substrate by solid source molecular beam epitaxy (MBE) technique using GaP decomposition source The critical point (CP) energies of the interband-transition edges of the structures were determined by line-shape analyses on their dielectric functions measured by spectroscopic ellipsometry (SE) at room temperature in the 0.5-5 eV photon energy regions We obtained a new bowing parameter by analyzing effect of the phosphorous compositions on the E-0 transition energy The band gap energies of the alloys and their bowing value were also obtained by evaluating photoluminescence (PL) emission peak positions at the room temperature