Compositional effects on the interband transition in GaAs1-xPx ternary alloys
OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, cilt.3, sa.9, ss.910-916, 2009 (SCI-Expanded, Scopus)
- Yayın Türü: Makale / Tam Makale
- Cilt numarası: 3 Sayı: 9
- Basım Tarihi: 2009
- Dergi Adı: OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS
- Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
- Sayfa Sayıları: ss.910-916
- Gazi Üniversitesi Adresli: Evet
Özet
GaAs1-xPx/GaAs alloys were grown on SI-GaAs (100) substrate by solid source molecular beam epitaxy (MBE) technique using GaP decomposition source The critical point (CP) energies of the interband-transition edges of the structures were determined by line-shape analyses on their dielectric functions measured by spectroscopic ellipsometry (SE) at room temperature in the 0.5-5 eV photon energy regions We obtained a new bowing parameter by analyzing effect of the phosphorous compositions on the E-0 transition energy The band gap energies of the alloys and their bowing value were also obtained by evaluating photoluminescence (PL) emission peak positions at the room temperature