A comparison of electrical characteristics of Au/n-Si (MS) structures with PVC and (PVC: Sm2O3) polymer interlayer


ALTINDAL Ş., Barkhordari A., ÖZÇELİK S., Pirgholi-Givi G., Mashayekhi H. R. , AZIZIAN-KALANDARAGH Y.

PHYSICA SCRIPTA, vol.96, no.12, 2021 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 96 Issue: 12
  • Publication Date: 2021
  • Doi Number: 10.1088/1402-4896/ac19cb
  • Journal Name: PHYSICA SCRIPTA
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Aerospace Database, Chemical Abstracts Core, Compendex, INSPEC, zbMATH
  • Keywords: MS structures with and without PVC and (Sm2O3-PVC) interlayer, basic electrical parameters, current conduction mechanisms, energy dependent profile of surface-states, CURRENT-TRANSPORT MECHANISMS, SCHOTTKY DIODES, CONDUCTION MECHANISMS, VOLTAGE-DEPENDENCE, SERIES RESISTANCE, TEMPERATURE-RANGE, PARAMETERS, FREQUENCY, STATES
  • Gazi University Affiliated: Yes

Abstract

The effects of polyvinylchloride (PVC) and samarium oxide-polyvinylchloride (PVC: Sm2O3) polymer interlayers on the electrical characteristics in detail. The fabricated reference sample Au/n-Si, Au/PVC/n-Si, and Au/(PVC: Sm2O3)/n-Si were named as Metal-Semiconductor (MS), Metal-Polymer-Semiconductor (MPS1), and MPS2 structure, respectively. The procedure of providing Sm2O3 is also described in detail. XRD, FE-SEM), EDX, and UV-vis spectroscopy, have been applied to study the mean crystalline structure, morphology, elemental characterization, and optical features of the provided Sm2O3. After structural analysis, the I-V features were performed in the wide range voltage (+/- 3.5 V), and then, the basic electronic parameters of these structures were extracted from various techniques and compared with each other. Experimental results show that (PVC: Sm2O3) leads to an increase of barrier-height (BH), rectifying-rate shunt-resistance (R-sh ), and decrease of ideality-factor (n), surface-states (N-ss ). The RR of the MPS2 structure was found 117 times higher than the MS structure. The energy-dependent profile of N (ss) was also obtained from the forward bias I-V data by considering voltage-dependent n and BH. The plots reverse-bias IR-VR0.5 characteristics show that Schottky-emission (SE) type conduction mechanism is effective for MS structure, whereas Poole-Frenkel-emission (PFE) is effective for MPS structures.