In this study, the electrical properties of dilute nitride GaAsPN/GaPN multi-quantum well p-i-n diodes were investigated by using current-voltage (I-V) measurements at room temperature. The diode structure was grown on silicon (Si) (100) substrate misoriented by 4A degrees towards the  direction using the molecular beam epitaxy technique, and ohmic contacts were formed on this structure by metallization process. The forward bias I-V characteristics of the diode were analyzed by the thermionic emission theory. Ideality factor (n), barrier height (I broken vertical bar(b)) and series resistance (R (s)), which are the main electrical parameters of diodes, were determined from I-V characteristic, Norde and Cheung methods. The obtained experimental results were compared with each other. From the I-V characteristic, the values of n and I broken vertical bar(b) were found to be 2.86 eV and 0.69 eV, respectively. The barrier height values, which were obtained from the Norde function and I-V characteristic, were in good agreement with each other. It was also found that the values of series resistance determined from the Norde and Cheung functions were compatible with each other.