A detailed study on optical properties of InGaN/GaN/Al2O3 multi quantum wells


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Bilgili A. K. , Akpinar O., Ozturk M. K. , ÖZÇELİK S. , Suludere Z., ÖZBAY E.

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, vol.30, no.11, pp.10391-10398, 2019 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 30 Issue: 11
  • Publication Date: 2019
  • Doi Number: 10.1007/s10854-019-01379-w
  • Title of Journal : JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
  • Page Numbers: pp.10391-10398

Abstract

In this study optical properties of InGaN/GaN/Al2O3 multi-quantum well (MQW) structures are investigated in detail. Three samples containing InGaN/GaN/Al2O3 MQWs are grown by using metal organic chemical vapor deposition technique. Sapphire (6H-Al2O3) is used as the substrate. Forbidden energy band gaps (E-g) of these three samples are determined from photoluminescence and absorption spectra. Results gained from these two spectra are compared with each other. It is found that E-g values are between 2 and 3eV. For determining refraction index, absorption coefficients, extinction coefficients and thickness of the films a rare method called Swanepoel envelope method is used. It is seen that results gained from this method are consistent with those in literature.