Admittance and Dielectric Characteristics of Al/MgO/p-Si Device Produced By Spraying Method

Güllü Ö., Türkeri M., TATAROĞLU A.

Silicon, 2025 (SCI-Expanded, Scopus) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Basım Tarihi: 2025
  • Doi Numarası: 10.1007/s12633-025-03547-6
  • Dergi Adı: Silicon
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Chemical Abstracts Core, Compendex, INSPEC
  • Anahtar Kelimeler: Ac conductivity, Admittance measurements, Dielectric constants, Electric modulus, Interface states, Series resistance
  • Gazi Üniversitesi Adresli: Evet

Özet

This article presents a detailed study of the admittance and dielectric characteristics of Al/MgO/p-Si device. The admittance (Y) measurements including both conductance (G) and capacitance (C) components of the device were performed in the frequency range of 5 kHz-3 MHz. Interface traps affecting the electrical properties of the device were determined from the measured C and G data at various frequencies using different methods such as the high-low frequency (CHF-CLF) capacitance and conductance. Furthermore, the dielectric parameters including ε', ε" and tanδ of the device were calculated using these measurement data. The high values ​​ of ε', ε" and tanδ were attributed to the presence of space charge polarization. The increase of ac conductivity (σac) with frequency is related to the increased mobility of electric charge carriers. The experimental results indicate that the fabricated Al/MgO/p-Si structure exhibits characteristics suitable for application as an energy storage component in electronic systems.