Characterization of electrical parameters in PbO/SnO2 double layer semiconductor (DLS) diodes

Seven E., Akay D., Bilge Ocak S., Orhan E.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, cilt.169, 2024 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 169
  • Basım Tarihi: 2024
  • Doi Numarası: 10.1016/j.mssp.2023.107913
  • Dergi Adı: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, PASCAL, Applied Science & Technology Source, Chemical Abstracts Core, Chimica, Communication Abstracts, Compendex, Computer & Applied Sciences, INSPEC, Metadex
  • Anahtar Kelimeler: Current-voltage measurement, Diode parameters, Double-layer film, Lead oxide, Schottky diode, Tin oxide
  • Gazi Üniversitesi Adresli: Evet

Özet

The study examines how a double-layer semiconductor (DLS) structure affects the diodes' electrical parameters. As a double-layer structure, PbO (Lead oxide) and SnO2 (Tin (IV) oxide) were used to form the DLS heterostructure. In the fabricated material, several electrical characteristic such as barrier-height (phi b), seriesresistance (Rs), and ideality-factor (n) of the PbO/SnO2 DLS diodes were investigated. The current-voltage (I-V) values were measured in the dark at 300 degrees K to extract the main electrical parameters for two identical diodes on the structure. The electrical properties of PbO/Tin Oxide DLS diodes such as series resistance (Rs), barrier height (phi b), ideality factor (n) using the thermionic emission (TE) theory, Norde's method, and Cheung's functions have investigated. While phi b and n values of Diode 1 using the TE method were computed to be 0.69 eV and 4.74 respectively, these values for Diode 2 were calculated as 0.72eV and 4.49, respectively. n and Rs values using the dV/dlnI vs I from Cheung's method for Diode 1 were also computed as 4.71 and 1.86 k omega while these values for Diode 2 were found as 5.88 and 1.36 k omega. phi b and Rs values using the H(I) vs I from Cheung's method for Diode 1 were calculated as 0.70 eV and 0.16 k omega, and they were computed as 0.80 eV and 0.14 k omega for Diode 2. phi b and Rs values using Norde Method were found as 0.74 eV and 88.29 k omega for Diode 1, 0.82 eV and 59.81 k omega for Diode 2. The product of free carrier concentration and mobility is implied by series resistance. The ideality factor is a criterion for determining how well a diode fits the ideal diode equation. Additionally, the barrier height is obtained using the carrier concentration in the PbO/SnO2 double-layer structure. Consequently, these structures, consisting of a double-layer hetero-structure with a PbO coated on SnO2, were found to have engaging electrical properties, allowing it to be used in device applications.