The possibility of increasing spectral sensitivity of an ionization-type semiconductor photographic system for a given photosensitivity of an Si:Zn semiconductor detector has been stud led. The cooling photographic system is designed to extend the sensitivity of the photographic system towards longer infrared (IR) wavelengths. The IR radiation excites the photosensitive semiconductor detector of the device, thus controlling the current density and the visible light emission from the gas discharge gap. The photodetector was irradiated on the back side with infrared radiation in a particular wavelength range which was used to control the photoconductivity of the detector. The size of the discharge gap and the residual gas pressure (60 Torr) are chosen to ensure a sufficiently bright light. The current-voltage characteristics of the discharge cell with a semiconducting photodetector are obtained experimentally.