Origin of anomalous peak and negative capacitance in the forward bias C-V characteristics of Au/n=InP Schottky Barier Diodes (SBDs)

Korucu D., Altindal Ş., Mammadov T. S., Ozcelik S.

JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, cilt.11, sa.2, ss.192-196, 2009 (SCI-Expanded) identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 11 Sayı: 2
  • Basım Tarihi: 2009
  • Dergi Adı: JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.192-196
  • Anahtar Kelimeler: Anomalous capacitance peaks, Negative capacitance, Au/n-InP SBD, Temperature dependence, Corrected C and G/w, DEPENDENT SERIES RESISTANCE, INTERFACE STATES, TEMPERATURE-DEPENDENCE, EXCESS CAPACITANCE, CURRENT-VOLTAGE, BARRIER DIODES, INP, PROFILE, CONTACTS, SILICON
  • Gazi Üniversitesi Adresli: Evet

Özet

The temperature dependence of forward and reverse bias capacitance-voltage (C-V) and conductance-voltage (G/w-V) characteristics of Au/n-InP SBDs have been investigated in the temperature range of 80-400 K at 1 MHz. Experimental results show that the values of capacitance (C) and conductance (G/w) were found a strongly function of temperature and bias voltage. The forward bias C-V plots exhibit anomalous peaks due to the existence of a series resistance (R-s) and the magnitude of these peaks decrease with increasing temperature. In addition, a negative capacitance has been observed in the forward bias C-V plots. Physical principle of the negative capacitance has been ascribed to the interface states, the contact injection and minority carrier injection effects. It is thought that the capacitance value decreases with increasing polarization and more carriers are introduced in the structure. Also, the measured capacitance (C-m) and conductance (G(m)/W) values have been corrected to obtain the real diode capacitance (C-c) and conductance (G(c)/W).