Electrical characterization of MIS diode prepared by magnetron sputtering

Tanrikulu H., TATAROĞLU A., Tanrikulu E., Ulusan A. B.

INDIAN JOURNAL OF PURE & APPLIED PHYSICS, cilt.56, sa.2, ss.142-148, 2018 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 56 Sayı: 2
  • Basım Tarihi: 2018
  • Dergi Adı: INDIAN JOURNAL OF PURE & APPLIED PHYSICS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.142-148
  • Anahtar Kelimeler: MIS diode, TiO2 thin film, Ideality factor, Barrier height, Interface states, Series resistance, I-V-T, CAPACITANCE-VOLTAGE CHARACTERISTICS, SCHOTTKY-BARRIER DIODES, TEMPERATURE-DEPENDENCE, OPTICAL-PROPERTIES, INTERFACE, INP, TRANSPORT, OXIDE, INHOMOGENEITIES
  • Gazi Üniversitesi Adresli: Evet

Özet

TiO2 thin film has been prepared on n-type Si wafer to fabricate an Au/TiO2/n-Si (MIS) diode by RF magnetron sputtering technique. The current-voltage (I-V) and capacitance-voltage (C-V) measurements of the diode have been performed over a wide range of temperatures (240-400 K) and frequencies (10 kHz(-1) MHz), respectively. From I-V measurements, an abnormal increase in the barrier height (Phi(b)) and a decrease in the ideality factor (n) with increasing temperature have been observed. This temperature dependence has been attributed to the barrier in homogeneities by assuming a Gaussian distribution (GD) of barrier heights at metal/semiconductor (MIS) interface. Both the conventional and modified Richardson plot show linearity. The activation energy (E-a), Richardson constant (A*) and (1:11, value have been calculated from the slope and intercept of the linear region. The obtained Richardson constant value of 113.82 A. cm(-2). K-2 is in close agreement with the known value of 112 A.cm(-2).K-2 for n-Si. The interface state density (N-ss) and series resistance (R-s) of the diode has been obtained from the I-V measurements. In addition, the 4:1)1, value was determined from C-2-V characteristics. The obtained results indicate that the MIS diode with TiO2 interfacial insulator layer can be used in many device applications.