TiO2 thin film has been prepared on n-type Si wafer to fabricate an Au/TiO2/n-Si (MIS) diode by RF magnetron sputtering technique. The current-voltage (I-V) and capacitance-voltage (C-V) measurements of the diode have been performed over a wide range of temperatures (240-400 K) and frequencies (10 kHz(-1) MHz), respectively. From I-V measurements, an abnormal increase in the barrier height (Phi(b)) and a decrease in the ideality factor (n) with increasing temperature have been observed. This temperature dependence has been attributed to the barrier in homogeneities by assuming a Gaussian distribution (GD) of barrier heights at metal/semiconductor (MIS) interface. Both the conventional and modified Richardson plot show linearity. The activation energy (E-a), Richardson constant (A*) and (1:11, value have been calculated from the slope and intercept of the linear region. The obtained Richardson constant value of 113.82 A. cm(-2). K-2 is in close agreement with the known value of 112 A.cm(-2).K-2 for n-Si. The interface state density (N-ss) and series resistance (R-s) of the diode has been obtained from the I-V measurements. In addition, the 4:1)1, value was determined from C-2-V characteristics. The obtained results indicate that the MIS diode with TiO2 interfacial insulator layer can be used in many device applications.