(CO)-C-60 gamma-ray irradiation effects on the capacitance and conductance characteristics of tin oxide films on Si


Selcuk A. B. , Ocak S.

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, cilt.577, sa.3, ss.719-723, 2007 (SCI İndekslerine Giren Dergi) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 577 Konu: 3
  • Basım Tarihi: 2007
  • Doi Numarası: 10.1016/j.nima.2007.04.107
  • Dergi Adı: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
  • Sayfa Sayıları: ss.719-723

Özet

Metal-oxide-semiconductor (MOS) Schottky diodes were stressed with a bias of 0 V during Co-60-gamma source irradiation with the total dose ranee from 0 to 500 kGy at room temperature. Tin oxide films on Si exhibited a typical behavior of a MOS structure. The variations in the interface state density and series resistance of the Schottky diode have been studied before and after irradiation. The capacitance-voltage (C-V) and conductance-voltage (G/omega-V) characteristics confirm that the interface state density (D-it,) and series resistance (R-s) of the diode are important parameters that strongly influence the electrical parameters of MOS structures before and after irradiation. It has been found that D-it values of MOS structure decreases, while the R, increases with increasing radiation dose. The single-frequency method of Hill-Coleman was used to determine the interface state density. The values, obtained before and after Co-60-gamma source radiation for D-it, are the order of 10(13) eV(-1) cm(-2). (c) 2007 Elsevier B.V. All rights reserved.