Electron transport in Ga-rich InxGa1-xN alloys


Yildiz A., LİŞESİVDİN S. B. , ACAR S. , Kasap M. , Bosi M.

CHINESE PHYSICS LETTERS, vol.24, no.10, pp.2930-2933, 2007 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 24 Issue: 10
  • Publication Date: 2007
  • Doi Number: 10.1088/0256-307x/24/10/060
  • Title of Journal : CHINESE PHYSICS LETTERS
  • Page Numbers: pp.2930-2933

Abstract

Resistivity and Hall effect measurements on n-type undoped Ga-rich InxGa1-xN (0.06 <= x <= 0.135) alloys grown by metal-organic vapour phase epitaxy (MOVPE) technique are carried out as a function of temperature (15-350K). Within the experimental error, the electron concentration in InxGa1-xN alloys is independent of temperature while the resistivity decreases as the temperature increases. Therefore, 1nxGai_x1V (0.06 <= x <= 0.135) alloys are considered in the metallic phase near the Mott transition. It has been shown that the temperature-dependent metallic conductivity can be well explained by the Mott model that takes into account electron-electron interactions and weak localization effects.