In this study, Ag/TiO2/n-InP/Au structure is formed by sputtering method and its reverse bias characterisation is made. n type InP semiconductor used in this study is 500 mu m thick and has a carrier density of 3.13 x 10(18) cm(-3). Thickness of TiO2 interface layer is adjusted as 60 angstrom. Some fundamental properties of the structure are investigated in a wide temperature range (120-360 K). Ln(I-r/E-r) vs E-0.5 plots are drawn by using reverse bias data. Barrier height and dielectric coefficient of TiO2 interfacial layer are determined. The importance of this study is, it discusses whether TiO2 can be used instead of SiO2 as an interfacial layer in Shottky barrier diodes or not. Also this study proves that dominant current conduction mechanism in Ag/TiO2/n-InP/Au structures can be explained with Frenkel-Poole emission or Schottky emission.