Manufacturing and electrical characterization of Al-doped ZnO-coated silicon nanowires

Kaya A., Polat K. G. , Mayet A. S. , Mao H., ALTINDAL Ş. , Islam M. S.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, cilt.75, ss.124-129, 2018 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 75
  • Basım Tarihi: 2018
  • Doi Numarası: 10.1016/j.mssp.2017.10.022
  • Sayfa Sayıları: ss.124-129


The p-type Si nanowires were synthesized via deep reactive ion etching (DRIE). Al-doped ZnO films were coated on a p-Si nanowires substrate using the sol-gel method. Al-doped ZnO/p-Si NWs were characterized using current-voltage (I-V) and capacitance-voltage (C-V) measurements in the dark and under illumination at room temperature. Electrical parameters such as series resistance (R-s), ideality factor (n), barrier height (Phi(B)) and doping concentration atoms (N-A) were investigated using the electrical measurements values at room temperature. Overall, I-V and C-V plots of the NWs were close to what was predicted and had excellent performance. The fabricated Al-doped ZnO/p-Si nanowires are more sensitive to light and frequency, so they are a promising candidate to be used as photovoltaic devices and photo-capacitors.