Dielectric properties of Ag/Ru-0.03-PVA/n-Si structures


Creative Commons License

Badali Y., Kocyigit S., USLU İ., ALTINDAL Ş.

BULLETIN OF MATERIALS SCIENCE, cilt.42, sa.5, 2019 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 42 Sayı: 5
  • Basım Tarihi: 2019
  • Doi Numarası: 10.1007/s12034-019-1875-4
  • Dergi Adı: BULLETIN OF MATERIALS SCIENCE
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Anahtar Kelimeler: Ag/Ru-0.03-PVA/n-Si, impedance spectroscopy, frequency dependence, surface states, AC ELECTRICAL-CONDUCTIVITY, IONIC-LAYER ADSORPTION, THIN-FILMS, SPECTROSCOPY, RELAXATION, FREQUENCY, RU
  • Gazi Üniversitesi Adresli: Evet

Özet

Ag/Ru-0.03-PVA/n-Si structures were successfully prepared and their morphological and electrical properties were investigated. The obtained electrical results suggested that the complex dielectric constant (epsilon* = epsilon'-j epsilon ''), complex electric modulus M* = M' + jM ''', loss tangent (tan delta) and alternating current (ac) electrical conductivity (sigma(ac)) are all a strong function of the frequency (f) and applied voltage. The changes in these parameters are the results of the existence of the surface states (N-ss) or interface traps (D-it = N-ss), interfacial polymer layer, surface and dipole polarizations and hopping mechanisms. The values of epsilon' and epsilon '' show a steep decline with increasing frequency and then reach a constant value at high frequency, whereas the increments of M' and M '' with frequency are exponential. The tan delta vs. log f plot has a strong peak behaviour, especially in the accumulation region. These experimental results suggested that the Ru-0.03-PVA interfacial layer could be used as a high dielectric material instead of conventional materials.