The role of Co-60 gamma-ray irradiation on the interface states and series resistance in MIS structures


Tascioglu I., TATAROĞLU A. , ÖZBAY A. , ALTINDAL Ş.

RADIATION PHYSICS AND CHEMISTRY, cilt.79, ss.457-461, 2010 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 79 Konu: 4
  • Basım Tarihi: 2010
  • Doi Numarası: 10.1016/j.radphyschem.2009.10.002
  • Dergi Adı: RADIATION PHYSICS AND CHEMISTRY
  • Sayfa Sayıları: ss.457-461

Özet

The effect of gamma-ray exposure on the metal-insulator-semiconductor (MIS) structures has been investigated using the electrical characteristics at room temperature. The MIS structures are irradiated with Co-60 gamma-ray source. The energy distribution of interface states was determined from the forward bias I-V characteristics by taking into account the bias dependence of the effective barrier height and ideality factor. The value of series resistance decreases with increasing dose. Experimental results confirmed that gamma-ray irradiation have a significant effect on electrical characteristics of MIS structures. (C) 2009 Elsevier Ltd. All rights reserved.