The role of Co-60 gamma-ray irradiation on the interface states and series resistance in MIS structures


Tascioglu I., Tataroğlu A. , Özbay A. , Altındal Ş.

RADIATION PHYSICS AND CHEMISTRY, vol.79, pp.457-461, 2010 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 79
  • Publication Date: 2010
  • Doi Number: 10.1016/j.radphyschem.2009.10.002
  • Title of Journal : RADIATION PHYSICS AND CHEMISTRY
  • Page Numbers: pp.457-461

Abstract

The effect of gamma-ray exposure on the metal-insulator-semiconductor (MIS) structures has been investigated using the electrical characteristics at room temperature. The MIS structures are irradiated with Co-60 gamma-ray source. The energy distribution of interface states was determined from the forward bias I-V characteristics by taking into account the bias dependence of the effective barrier height and ideality factor. The value of series resistance decreases with increasing dose. Experimental results confirmed that gamma-ray irradiation have a significant effect on electrical characteristics of MIS structures. (C) 2009 Elsevier Ltd. All rights reserved.