Synthesis, electrical and photo-sensing characteristics of the Al/(PCBM/NiO: ZnO)/p-Si nanocomposite structures

Demirezen S., Cetinkaya H. G., Kara M., Yakuphanoglu F., ALTINDAL Ş.

SENSORS AND ACTUATORS A-PHYSICAL, cilt.317, 2021 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 317
  • Basım Tarihi: 2021
  • Doi Numarası: 10.1016/j.sna.2020.112449
  • Dergi Adı: SENSORS AND ACTUATORS A-PHYSICAL
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Aerospace Database, Biotechnology Research Abstracts, Chemical Abstracts Core, Communication Abstracts, INSPEC, Metadex, Civil Engineering Abstracts
  • Anahtar Kelimeler: Al/(PCBM/NiO:ZnO)/p-Si, Structures/diodes, Photo-response characteristics, Impedance spectroscopy method, Anomalous peak in the forward bias C-V plots, THIN-FILMS, ZNO, OXIDE
  • Gazi Üniversitesi Adresli: Evet

Özet

In this study, metal-oxide (NiO:ZnO) nanocomposites mixed with different weight-percentages (2, 10, 20 % NiO) content were coated on the p-Si wafer via spin-coating method. The optical and electrical features of the Al/(PCBM/NiO:ZnO)/p-Si structures/diodes were investigated and compared via currentvoltage/time (I-V/t) and capacitance/conductance-voltage-frequency (C/G-V-f) characteristics in dark and various illumination intensities (20, 40, 60, 80, 100 mW/cm(2)) at room temperature. Main electrical parameters of them such as ideality factor (n), barrier height (Phi(b)), rectification ratio (RR = I-F/I-R) and series resistance (R-s) were calculated for each percentage (2, 10, and 20 % NiO). Experimental results show that the best percentages of NiO is 20 % in respect of high value of RR and low Rs, but the value of n increases with increasing in percentages. The transient photocurrent increases with increasing illumination level. The slope (m) of the double-logarithmic I-ph -P plots were found as 0.67, 0.87 and 0.82, respectively, and these slopes confirmed that these nanocomposites exhibit photoconduction behaviour and hence Al/(PCBM/NiO:ZnO)/p-Si structure can be used a photo device/sensor. The observed changes in the I with illumination, C and G with frequency are the results of interface states (N-ss) located at (PCBM/NiO:ZnO)/p-Si interface and so reorder and restructure of them under illumination, bias voltage, and frequency. (C) 2020 Elsevier B.V. All rights reserved.