Analysis of interface states and series resistance of MIS Schottky diodes using the current-voltage (I-V) characteristics

TATAROĞLU A. , Altindal Ş.

MICROELECTRONIC ENGINEERING, cilt.85, ss.233-237, 2008 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 85 Konu: 1
  • Basım Tarihi: 2008
  • Doi Numarası: 10.1016/j.mee.2007.05.043
  • Sayfa Sayıları: ss.233-237


The purpose of this paper is to analyze interface states in Al/SiO2/p-Si (MIS) Schottky diodes and determine the effect Of SiO2 surface preparation on the interface state energy distribution. The current-voltage (I-V) characteristics of MIS Schottky diodes were measured at room temperature. From the I-V characteristics of the MIS Schottky diode, ideality factor (n) and barrier height (Phi(B)) values of 1.537 and 0.763 eV, respectively, were obtained from a forward bias I-V plot. In addition, the density of interface states (N-ss) as a function of (E-ss-E-v) was extracted from the forward bias I-V measurements by taking into account both the bias dependence of the effective barrier height (Phi(e)), n and R-s for the MIS Schottky diode. The diode shows non-ideal I-V behaviour with ideality factor greater than unity. In addition, the values of series resistance (R-s) were determined using Cheung's method. The I-V characteristics confirmed that the distribution of N-ss, R-s and interfacial insulator layer are important parameters that influence the electrical characteristics of MIS Schottky diodes. (C) 2007 Elsevier B.V. All rights reserved.