Analysis of interface states and series resistance of MIS Schottky diodes using the current-voltage (I-V) characteristics

TATAROĞLU A., Altindal Ş.

MICROELECTRONIC ENGINEERING, cilt.85, sa.1, ss.233-237, 2008 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 85 Sayı: 1
  • Basım Tarihi: 2008
  • Doi Numarası: 10.1016/j.mee.2007.05.043
  • Dergi Adı: MICROELECTRONIC ENGINEERING
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.233-237
  • Anahtar Kelimeler: MIS Schottky diodes, I-V characteristics, ideality factor, barrier height, interface states, ELECTRICAL CHARACTERISTICS, MOS STRUCTURES, TEMPERATURE-DEPENDENCE, SILICON, PARAMETERS, MECHANISM, RADIATION, TRANSPORT, BARRIERS, CONTACTS
  • Gazi Üniversitesi Adresli: Evet

Özet

The purpose of this paper is to analyze interface states in Al/SiO2/p-Si (MIS) Schottky diodes and determine the effect Of SiO2 surface preparation on the interface state energy distribution. The current-voltage (I-V) characteristics of MIS Schottky diodes were measured at room temperature. From the I-V characteristics of the MIS Schottky diode, ideality factor (n) and barrier height (Phi(B)) values of 1.537 and 0.763 eV, respectively, were obtained from a forward bias I-V plot. In addition, the density of interface states (N-ss) as a function of (E-ss-E-v) was extracted from the forward bias I-V measurements by taking into account both the bias dependence of the effective barrier height (Phi(e)), n and R-s for the MIS Schottky diode. The diode shows non-ideal I-V behaviour with ideality factor greater than unity. In addition, the values of series resistance (R-s) were determined using Cheung's method. The I-V characteristics confirmed that the distribution of N-ss, R-s and interfacial insulator layer are important parameters that influence the electrical characteristics of MIS Schottky diodes. (C) 2007 Elsevier B.V. All rights reserved.