Akademik Veri Yönetim Sistemi
OPTOELECTRONIC PROPERTIES OF GaAs, GaP and ZnSe CATHODES IN A PLASMA-SEMICONDUCTOR CELL, Editors: Ikhmayies,Shadia Jamil,Kurt,Hatice Hilal (Eds.), Editör, Springer, London/Berlin , Zürich, ss.1-349, 2021
This chapter is
focused on the optical and electrical characterization of semiconductor
materials in a plasma –semiconductor cell because of their applications in
electronic devices and infrared image converter cells. The main focus was to
get the discharge current and discharge light emission of the plasma in the
structure in the case of various interelectrode distance d, gas pressure p and
cathode diameter D. The gas discharges systems with semiconductor cathode are the subjects
of interest in recent years due to their applications such as semiconductor processing, surface treatment, sterilization.
Despite the fact that semiconductor electronic materials have been known for
years, more information is needed to completely understand the mechanisms controlling
the plasma process. A great effort has
been made to get knowledge about these materials during the years in the fields
of optics and electronics. In that manner, the present section concerns with
the optoelectronic characterization of some Infrared sensitive semiconductors to
explore the physical parameters having great importance in the investigated
structure. Briefly, optoelectronic properties of III-V (GaAs and GaP) and II_VI
group semiconductor electronic material (ZnSe) have been studied in a
plasma-semiconductor structure. The interest in those materials has increased
mainly due to their emergence of important applications over a wide range of
areas such as power amplifier, light-emitting diodes, detectors, photovoltaic
cells and microwave. GaAs, GaP and ZnSe
are significant materials which are used as Infrared detectors in device
application. They exhibit good performance and fast response against Infrared
radiation.