AZO thin film-based UV sensors: effects of RF power on the films


AKIN SÖNMEZ N., Baskose U. C., KINACI B., ÇAKMAK M., ÖZÇELİK S.

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, cilt.119, sa.3, ss.965-970, 2015 (SCI-Expanded) identifier identifier

Özet

Al-doped zinc oxide (AZO) thin films of thickness 150 nm were deposited on polyethylene terephthalate (PET) substrates by radio frequency (RF) magnetron sputtering method under various RF powers in the range of 25-100 W. Structural, morphological, optical and electrical properties of the films were investigated by X-ray diffractometer, atomic force microscope, UV-Vis spectrometer and Hall effect measurement system. All the obtained films had a highly preferred orientation along [002] direction of the c-axis perpendicular to the flexible PET substrate and had a high-quality surface. The energy band gap (E-g) values of the films varied in the range of 3.30-3.43 eV. The minimum resistivity of 1.84 x 10(-4) Omega cm was obtained at a 50 W RF power. The small changes in the RF power had a critical important role on the structural, optical and electrical properties of the sputtered AZO thin films on flexible PET substrate. In addition, UV sensing of the fabricated AZO thin film-based sensors was explored by using current-voltage (I-V) characteristics. The sensors were sensitive in the UV region of the electromagnetic spectrum.