Hysteresis and memory characteristics of GaAs photodetector in a modified IR image converter

Kurt H. H., Cetin S., Yurtseven A.

JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, cilt.16, ss.138-143, 2014 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 16
  • Basım Tarihi: 2014
  • Dergi Adı: JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.138-143
  • Gazi Üniversitesi Adresli: Evet

Özet

The hysteresis and corresponding memory effect were reported in an IR image converter from a modified configuration with contact-free photodetector under various operating conditions for the first time to our knowledge. It was considered that the memory effect based on hysteresis plot in the modified configuration was apparently due to charge trapping in the GaAs memory detectors. The effect of gas pressure on the CVC and the hysteresis curves were studied in detail. It was proven that gas pressure was one of the key parameters affecting the hysteresis width. In addition, the memory effect was found to be sensitive to the illumination intensity on the photodetector.