Integration of Zn-doped organic polymer nanocomposites between metal semiconductor structure to reveal the electrical qualifications of the diodes

Tecimer H. U., Alper M. A., Tecimer H., Tan S. O., Altindal Ş.

POLYMER BULLETIN, cilt.75, sa.9, ss.4257-4271, 2018 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 75 Sayı: 9
  • Basım Tarihi: 2018
  • Doi Numarası: 10.1007/s00289-018-2274-5
  • Dergi Adı: POLYMER BULLETIN
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.4257-4271
  • Anahtar Kelimeler: Nanocomposite, Schottky diode, Polymer, Interfacial Layer, PVA, TEMPERATURE
  • Gazi Üniversitesi Adresli: Evet

Özet

Schottky barrier diodes (SBDs) have been fabricated with pure and zinc (Zn) doped organic interfacial layer of polyvinyl alcohol (PVA) to form Au/PVA/n-GaAs and Au/PVA(Zn-doped)/n-GaAs structures. The electrical characterization of these SBDs have also been made using their current-voltage (I-V) characteristics data on both forward and reverse biases at room temperature. The main electrical parameters, such as ideality factor (n), barrier height (I broken vertical bar (Bo)), series resistance (R (s)) and the voltage dependence resistance (R (i)) have also been extracted from the I-V data to compare the Zn-doped and undoped polymer interfacial layer SBDs. The rectifying ratio values of Au/PVA/n-GaAs and Au/PVA(Zn-doped)/n-GaAs SBDs have been obtained as 10(5) and 10(7), respectively, at (+/- 2 V). Consequently, the comparison of the polymer interfacial layer SBDs indicates that the Zn-doped SBDs have given better results than the undoped SBDs when considering the main electrical parameters at room temperature.