Graphene oxide-doped praseodymium barium cobalt oxide (GO-doped PrBaCoO) nanoceramic was used an interfacial layer for the purpose of increasing the capacitance in Au/n-Si metal semiconductor (MS) structures. The frequency and voltage dependence of dielectric constant (epsilon'), dielectric loss (epsilon ''), loss tangent (tan delta), the real and imaginary parts of electric modulus (M' and M '') and ac electrical conductivity (sigma(ac)) of Au/GO-doped PrBaCoO nanoceramic/n-Si capacitors were investigated in detail by impedance spectroscopy method in the wide frequency range of 1 kHz to 1 MHz at room temperature. Experimental results showed that epsilon'-V plot has two distinct peaks that are located at about 0 and 2 V, respectively, at low frequencies, but the first peak disappears at high frequencies. While the value of M' increase with increasing frequency M '' shows a peak and the peak position shifts to higher frequency with increasing applied voltage. Such peak behavior can be attributed to the particular distribution of interface states located between Au and interfacial layer and to the interfacial polarization. It can be concluded that the interfacial polarization and the charges at interface can easily follow ac signal at low frequencies. In addition, the ln(sigma(ac)) vs ln(omega) plot of the capacitor for 3 V has two linear regions (I and II) with different slopes which correspond to low and high frequency ranges, respectively. Such behavior of ln(sigma(ac)) vs ln(omega) plot indicated that there are two different conduction mechanisms in the Au/GO-doped PrBaCoO nanoceramic/n-Si capacitor at room temperature. (C) 2015 Elsevier Ltd and Techna Group S.r.l. All rights reserved.