Akademik Veri Yönetim Sistemi
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, cilt.34, sa.29, 2023 (SCI-Expanded)
WO3 with thicknesses of 100 nm were deposited on p-Si substrate at room temperature by DC magnetron sputtering technique. Tungsten (W) target was used to create Tungsten oxide (WO3) thin film, and the deposition process was performed at 100 W power, 10 mTorr process pressure (Ar:O-2 ratio 80:20), 5 rpm rotation speed, and room temperature, respectively. The structural, morphological, and optical properties of WO3 thin film were analyzed. Structural analysis of the structure was performed using the X-ray diffractometer (XRD) method. From XRD analysis, it was determined that a WO3 structure in the orthorhombic phase was obtained. Morphological analysis of the structure was performed using an atomic force microscope (AFM) system. Particle size and surface roughness values of the structure were determined from AFM analysis. Optical analysis of the structure was performed using a UV Vis Spectrometer (UV-Vis) and photoluminescence (PL) systems. The band gap value of the structure was determined from optical analysis. In addition, the electrical and dielectric properties of the Au/WO3/p-Si/AuGe structure, whose metallization phase has been completed, were examined in detail. C-V and G/omega-V measurements were made in the wide frequency range of 1 kHz-3 MHz, and the basic dielectric parameters were calculated from the obtained C and G/omega data.