Interface state density analyzing of Au/TiO2(rutile)/n-Si Schottky barrier diode

Altuntas H., Bengi A., Asar T., Aydemir U., Sarikavak B., Özen Y., ...Daha Fazla

SURFACE AND INTERFACE ANALYSIS, cilt.42, sa.6-7, ss.1257-1260, 2010 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 42 Sayı: 6-7
  • Basım Tarihi: 2010
  • Doi Numarası: 10.1002/sia.3331
  • Dergi Adı: SURFACE AND INTERFACE ANALYSIS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.1257-1260
  • Anahtar Kelimeler: Au/TiO2/n-Si SBDs, I-V characteristics, barrier height, Nss, CURRENT-VOLTAGE CHARACTERISTICS, TEMPERATURE-DEPENDENCE, INSULATOR, INHOMOGENEITIES, SEMICONDUCTOR, PARAMETERS, CONTACTS, HEIGHTS, GAAS
  • Gazi Üniversitesi Adresli: Evet

Özet

The purpose of this study is to analyze interface states (N-ss) in Au/TiO2(Rutile)/n-Si Schottky barrier diodes (SBDs). TiO2 was deposited on a n-Si substrate by reactive magnetron sputtering and annealed at 900 degrees C for 4 h in atmosphere to obtain rutile phase. The current voltage (I-V) characteristics of SBDs were measured at room temperature. From the I-V characteristics of the SBDs ideality factor (n) and zero-bias barrier height values (phi(Bo)) 2.3 and 0.76 eV, respectively, were obtained. The N-ss distribution profile (N-ss) as a function of (E-c - E-ss) was extracted from the forward-bias I-V measurements by taking account effective barrier height and (phi(e)) and series resistance (R-s) for the Schottky diode. Nss values ranges from 4.3 x 10(12) cm(-2) eV(-1) in (E-c - 0.33) eV and 8.0 x 10(13) cm(-2) eV(-1) in (E-c - 0.33) eV. These values are better than in the literature values where TiO2 was deposited sol-gel method. The N-ss values taking into R-s were lower than without R-s. This shows that Rs should be taking account. Copyright (C) 2010 John Wiley & Sons, Ltd.