Dielectric characteristics and electrical conductivity behavior of graphene/Al2O3/p-type silicon structure

Kaymak N., Orhan E., Bayram O., Bilge Ocak S.

Materials Chemistry and Physics, cilt.258, 2021 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 258
  • Basım Tarihi: 2021
  • Doi Numarası: 10.1016/j.matchemphys.2020.123878
  • Dergi Adı: Materials Chemistry and Physics
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Aerospace Database, Chemical Abstracts Core, Communication Abstracts, INSPEC, Metadex, Civil Engineering Abstracts
  • Anahtar Kelimeler: Graphene/Al2O3/p-type silicon structure, Dielectric characteristics, Electrical conductivity, Interface states, FREQUENCY
  • Gazi Üniversitesi Adresli: Evet

Özet

© 2020 Elsevier B.V.Graphene nanosheets (Gns) obtained by the chemical vapor deposition (CVD) method have been employed for the fabrication of Graphene/Al2O3/p-type silicon (Si) structure. The Raman, scanning-electron-microscopy (SEM) and transmission-electron-microscopy (TEM) have been used to analyze the morphology and structural features of the graphene nanosheet. The dielectric features and electrical-conductivity of Graphene/Al2O3/p-type Si have been studied in the frequency range 10 kHz–400 kHz and in the voltage range, −4 V to +4 V at 300 K. The obtained experimental outcomes imply that electrical conductivity and dielectric features of Graphene/Al2O3/p-type Si were found out to be powerful functions of frequency and applied bias voltage. It can be seen that almost all of the interface states between metal and silicon contribute to modify of dielectric features of Graphene/Al2O3/p-type Si structure.