Influence of gas medium on the sensitivity of an ionization type semiconductor photographic system

Salamov B., Colakoglu K., Altindal Ş.

IMAGING SCIENCE JOURNAL, cilt.45, sa.2, ss.65-68, 1997 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 45 Sayı: 2
  • Basım Tarihi: 1997
  • Doi Numarası: 10.1080/13682199.1997.11736376
  • Dergi Adı: IMAGING SCIENCE JOURNAL
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.65-68
  • Gazi Üniversitesi Adresli: Evet

Özet

The results of measurements of the characteristics of the ionization-type semiconductor photographic system with a gas discharge gap on both sides of a semiconducting GaAs:Cr plate are presented. Characteristics were measured under fixed pressure in the interval 600-60 Torr. As a result of this investigation one can see that it is possible to choose optimum renditions for a photographic ionization system filled by inert gases. Using this gas medium solves the problem of retaining semiconductor surface and change of the glow spectrum of gas. Means of increasing the sensitivity and improving the working characteristics are proposed.