Grain Boundary Related Electrical Transport in Al-rich AlxGa1-xN Layers Grown by Metal-Organic Chemical Vapor Deposition

Creative Commons License

Yildiz A., Tasli P., Sarikavak B., Lisesivdin S. B., Ozturk M. K., Kasap M., ...Daha Fazla

SEMICONDUCTORS, cilt.45, sa.1, ss.33-36, 2011 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 45 Sayı: 1
  • Basım Tarihi: 2011
  • Doi Numarası: 10.1134/s1063782611010234
  • Dergi Adı: SEMICONDUCTORS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.33-36
  • Gazi Üniversitesi Adresli: Evet

Özet

Electrical transport data for Al-rich AlGaN layers grown by metal-organic chemical vapor deposition (MOCVD) are presented and analyzed in the temperature range 135-300 K. The temperature dependence of electrical conductivity indicated that conductivity in the films was controlled by potential barriers caused by carrier depletion at grain boundaries in the material. The Seto's grain boundary model provided a complete framework for understanding of the conductivity behavior. Various electrical parameters of the present samples such as grain boundary potential, donor concentration, surface trap density, and Debye screening length were extracted.